Click to expand full text
2SC6075
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6075
Power Amplifier Applications Power Switching Applications
Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ)
www.DataSheet4U.com
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 160 160 80 9 2.5 5.0 1.0 1.3 150 −55～150 Unit V V V V A A A W °C °C 1 : EMITTER 2 : COLLECTOR 3 : BASE
JEDEC JEITA TOSHIBA Weight:0.55g(typ)
― ― 2-8M1A
Note: Using continuously under heavy loads (e.g.
2SC6075 Datasheet
